Virginia Tech
    • Log in
    View Item 
    •   VTechWorks Home
    • ETDs: Virginia Tech Electronic Theses and Dissertations
    • Doctoral Dissertations
    • View Item
    •   VTechWorks Home
    • ETDs: Virginia Tech Electronic Theses and Dissertations
    • Doctoral Dissertations
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Non-Equilibrium Relaxation Dynamics in Disordered Superconductors and Semiconductors

    Thumbnail
    View/Open
    Assi_H_D_2016.pdf (9.029Mb)
    Downloads: 963
    Supporting documents (90.45Kb)
    Downloads: 63
    Date
    2016-04-26
    Author
    Assi, Hiba
    Metadata
    Show full item record
    Abstract
    We investigate the relaxation properties of two distinct systems: magnetic vortex lines in disordered type-II superconductors and charge carriers in the Coulomb glass in disordered semiconductors. We utilize an elastic line model to simulate magnetic flux lines in disordered type-II superconductors by performing Langevin molecular dynamics simulations. We study the non-equilibrium relaxation properties of flux lines in the presence of uncorrelated point-like disorder or extended linear defects analyzing the effects of rapid changes in the system's temperature or magnetic field on these properties. In a previously-equilibrated system, either the temperature is suddenly changed or the magnetic field is abruptly altered by adding or removing random flux lines to or from the system. One-time observables such as the radius of gyration are measured to characterize steady-state properties, and two-time correlation functions such as the vortex line height autocorrelations are computed to investigate the relaxation dynamics in the aging regime and therefore distinguish the complex relaxation features that result from the different types of disorder in the system. This study allows us to test the sensitivity of the system's non-equilibrium aging kinetics to the selection of initial states and to make closer contact to experimental setups. Furthermore, we employ Monte Carlo simulations to study the relaxation properties of the two-dimensional Coulomb glass in disordered semiconductors and the two-dimensional Bose glass in type-II superconductors in the presence of extended linear defects. We investigate the effects of adding non-zero random on-site energies from different distributions on the properties of the correlation-induced Coulomb gap in the density of states and on the non-equilibrium aging kinetics highlighted by the autocorrelation functions. We also probe the sensitivity of the system's equilibrium and non-equilibrium relaxation properties to instantaneous changes in the density of charge carriers in the Coulomb glass or flux lines in the Bose glass.
    URI
    http://hdl.handle.net/10919/70858
    Collections
    • Doctoral Dissertations [16332]

    If you believe that any material in VTechWorks should be removed, please see our policy and procedure for Requesting that Material be Amended or Removed. All takedown requests will be promptly acknowledged and investigated.

    Virginia Tech | University Libraries | Contact Us
     

     

    VTechWorks

    AboutPoliciesHelp

    Browse

    All of VTechWorksCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

    My Account

    Log inRegister

    Statistics

    View Usage Statistics

    If you believe that any material in VTechWorks should be removed, please see our policy and procedure for Requesting that Material be Amended or Removed. All takedown requests will be promptly acknowledged and investigated.

    Virginia Tech | University Libraries | Contact Us