Show simple item record

dc.contributor.authorBanerjee, Rajarshi
dc.date.accessioned2016-06-27T19:03:18Z
dc.date.available2016-06-27T19:03:18Z
dc.date.issued2001
dc.identifiereprint:260
dc.identifier.urihttp://hdl.handle.net/10919/71500
dc.description.abstractMetal/semiconductor interfaces, particularly those involving Si, are of great technological and scientific interest. In atomically abrupt interfaces, many properties are determined by interatomic interactions over a few layers, i.e., over ~1 nanometer. The initial stages of growth of an atomic layer related to structural and electronic properties are thus important to thin film behavior. Surface science studies on metal-semiconductor systems often lead to contradictory conclusions regarding bonding sites and even whether the first layer is metallic or not. A key piece of information that must be consistent with any study is the number of atoms per unit area in the first layer, which is difficult to assess directly. Alkali-metal-semiconductor systems have been studied as model abrupt interfaces for several years. Novel effects, such as electron localization, were observed. Still, determinations of absolute coverage have been lacking. This dissertation describes results of absolute coverage measurements for Cs on Si(100)(2X1), Si(111)(7X7), and Si (111)(v3 X v3)R30°-B reconstructed surfaces using Rutherford Backscattering Spectrometry in ultrahigh vacuum. The results bracket possible structural models for these systems. For the Cs/Si(111)(v3 X v3)R30°-B interface, this work confirms conclusions regarding electron localization effects and introduces considerations of ion-beam-induced desorption for the weakly-bound Csen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoenen_US
dc.subjectreconstructionen_US
dc.subjectsiliconen_US
dc.subjectthin filmsen_US
dc.subjectRBSen_US
dc.subjectinterfaceen_US
dc.subjectsurface physicsen_US
dc.subjectalkali metalsen_US
dc.subjectcesiumen_US
dc.subjectordereden_US
dc.subjectordered growthen_US
dc.subjectepitaxyen_US
dc.subjection scatteringen_US
dc.subjectsemiconductorsen_US
dc.subjectmetalizationen_US
dc.subjectcharacterizationen_US
dc.subjectRutherforden_US
dc.subjectboronateden_US
dc.subjectdopeden_US
dc.subject.lccQC
dc.titleAbsolute coverage measurements of ultrathin alkali-metal films on reconstructed siliconen_US
dc.typeDissertationen_US
dc.contributor.departmentPhysicsen_US
thesis.degree.leveldoctoralen_US
thesis.degree.grantorDrexel Universityen_US


Files in this item

Thumbnail
Thumbnail
Thumbnail
Thumbnail
Thumbnail
Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record