Virginia Tech
    • Log in
    Search 
    •   VTechWorks Home
    • Virginia Tech Patents
    • Search
    •   VTechWorks Home
    • Virginia Tech Patents
    • Search
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Search

    Show Advanced FiltersHide Advanced Filters

    Filters

    Use filters to refine the search results.

    Now showing items 1-9 of 9

    • Sort Options:
    • Relevance
    • Title Asc
    • Title Desc
    • Issue Date Asc
    • Issue Date Desc
    • Results Per Page:
    • 5
    • 10
    • 20
    • 40
    • 60
    • 80
    • 100
    Thumbnail

    Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials 

    Desu, Seshu B.; Peng, Chia-Tien Shian; Si, Jie (United States Patent and Trademark Office, 1997-05-13)
    A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a ...
    Thumbnail

    Low temperature seeding process for ferroelectric memory device 

    Desu, Seshu B.; Kwok, Chi Kong (United States Patent and Trademark Office, 1998-10-06)
    A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a ...
    Thumbnail

    Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas 

    Desu, Seshu B.; Pan, Wei (United States Patent and Trademark Office, 1995-01-17)
    A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are ...
    Thumbnail

    Dry etching of layer structure oxides 

    Desu, Seshu B.; Pan, Wei (United States Patent and Trademark Office, 1999-02-23)
    A method of patterning layered structure oxide thin films involving placing the layered structure thin film (with or without a mask) laid on a substrate into a chamber which is partially filled with CHC1FCF.sub.3 gas and ...
    Thumbnail

    Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials 

    Desu, Seshu B.; Peng, Chia-Tien Shian; Si, Jie (United States Patent and Trademark Office, 1998-02-10)
    A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a ...
    Thumbnail

    Simple method of fabricating ferroelectric capacitors 

    Desu, Seshu B.; Vijay, Dilip P.; Bhatt, Hemanshu D. (United States Patent and Trademark Office, 1998-09-15)
    A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal ...
    Thumbnail

    High temperature electrode-barriers for ferroelectric and other capacitor structures 

    Desu, Seshu B.; Vijay, Dilip P.; Bhatt, Hemanshu D.; Hwang, Yoo-Sang (United States Patent and Trademark Office, 1998-08-04)
    A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer ...
    Thumbnail

    Metalorganic chemical vapor deposition of ferroelectric thin films 

    Desu, Seshu B.; Peng, Chia-Tien Shian (United States Patent and Trademark Office, 1995-07-11)
    A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire ...
    Thumbnail

    Flash evaporator 

    Desu, Seshu B.; Ramanathan, Sasangan; Suchicital, Carlos T. A. (United States Patent and Trademark Office, 1999-03-23)
    A device and method for flash evaporating a reagent includes an evaporation chamber that houses a dome on which evaporation occurs. The dome is solid and of high thermal conductivity and mass, and may be heated to a ...

    If you believe that any material in VTechWorks should be removed, please see our policy and procedure for Requesting that Material be Amended or Removed. All takedown requests will be promptly acknowledged and investigated.

    Virginia Tech | University Libraries | Contact Us
     

     

    Browse

    All of VTechWorksCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CommunityBy Issue DateAuthorsTitlesSubjects

    My Account

    Log inRegister

    Discover

    Patent Typeutility (9)InventorDesu, Seshu B. (9)Peng, Chia-Tien Shian (3)Bhatt, Hemanshu D. (2)Pan, Wei (2)Si, Jie (2)... View MoreAssignee
    Sharp Kabushiki Kaisha (9)
    Virginia Tech Intellectual Properties, Inc. (7)Cedraeus Incorporated (2)Virginia Polytechnic Institute and State University (2)Ceraboma, Inc. (1)Publication Date1999 (2)1998 (4)1997 (1)1995 (2)Has File(s)Yes (9)

    If you believe that any material in VTechWorks should be removed, please see our policy and procedure for Requesting that Material be Amended or Removed. All takedown requests will be promptly acknowledged and investigated.

    Virginia Tech | University Libraries | Contact Us