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Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction
(United States Patent and Trademark Office, 1996-02-13)
A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate ...
Dry etching of layer structure oxides
(United States Patent and Trademark Office, 1999-02-23)
A method of patterning layered structure oxide thin films involving placing the layered structure thin film (with or without a mask) laid on a substrate into a chamber which is partially filled with CHC1FCF.sub.3 gas and ...
Low temperature seeding process for ferroelectric memory device
(United States Patent and Trademark Office, 1998-10-06)
A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a ...
Metalorganic chemical vapor deposition of ferroelectric thin films
(United States Patent and Trademark Office, 1995-07-11)
A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire ...
Simple method of fabricating ferroelectric capacitors
(United States Patent and Trademark Office, 1998-09-15)
A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal ...
Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials
(United States Patent and Trademark Office, 1997-05-13)
A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a ...
Metalorganic chemical vapor deposition of layered structure oxides
(United States Patent and Trademark Office, 1996-06-18)
A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of ...
Flash evaporator
(United States Patent and Trademark Office, 1999-03-23)
A device and method for flash evaporating a reagent includes an evaporation chamber that houses a dome on which evaporation occurs. The dome is solid and of high thermal conductivity and mass, and may be heated to a ...
Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films
(United States Patent and Trademark Office, 1996-03-05)
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are ...
Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials
(United States Patent and Trademark Office, 1998-02-10)
A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a ...