A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a ...

A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a ...

A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are ...

A method of patterning layered structure oxide thin films involving placing the layered structure thin film (with or without a mask) laid on a substrate into a chamber which is partially filled with CHC1FCF.sub.3 gas and ...

A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a ...

A device and method for flash evaporating a reagent includes an evaporation chamber that houses a dome on which evaporation occurs. The dome is solid and of high thermal conductivity and mass, and may be heated to a ...

A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal ...

A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer ...

A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire ...