Now showing items 1-3 of 3
Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction
(United States Patent and Trademark Office, 1996-02-13)
A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate ...
Metalorganic chemical vapor deposition of layered structure oxides
(United States Patent and Trademark Office, 1996-06-18)
A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of ...
Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films
(United States Patent and Trademark Office, 1996-03-05)
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are ...