Now showing items 11-12 of 12
High temperature electrode-barriers for ferroelectric and other capacitor structures
(United States Patent and Trademark Office, 1998-08-04)
A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer ...
Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas
(United States Patent and Trademark Office, 1995-01-17)
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are ...