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Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas
(United States Patent and Trademark Office, 1995-01-17)
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are ...
Low temperature seeding process for ferroelectric memory device
(United States Patent and Trademark Office, 1998-10-06)
A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a ...