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dc.date.accessioned2016-08-24T17:53:43Z
dc.date.available2016-08-24T17:53:43Z
dc.date.issued1995-12-26
dc.identifier.urihttp://hdl.handle.net/10919/72302
dc.description.abstractA method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays.
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.publisherUnited States Patent and Trademark Office
dc.titleMetalorganic chemical vapor deposition of layered structure oxides
dc.typePatent
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/10/786/054/0.pdf
dc.date.accessed2016-08-19
dc.type.dcmitypeText
dc.contributor.assigneeSharp Kabushiki
dc.contributor.assigneeCedraeus Incorporated
dc.contributor.assigneeVirginia Polytechnic Institute and State University
dc.contributor.inventorDesu, Seshu B.
dc.contributor.inventorTao, W.
dc.date.filed1994-09-02
dc.identifier.applicationnumber8300339
dc.subject.uspc257/E21.009
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dc.type.patenttypeutility
dc.identifier.patentnumber5478610


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