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    Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction

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    Date
    1996-02-13
    Inventor
    Desu, Seshu B.
    Yoo, In Kyung
    Kwok, Chi Kong
    Vijay, Dilip P.
    Metadata
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    Abstract
    A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at the interface between the ferroelectric and the electrode. This interlayer is created by reaction between the materials of the ferroelectric and electrode, and in this case would be Pb.sub.2 Ru.sub.2 O.sub.7-x. A conductive top layer is deposited over the ferroelectric. This top layer may be a metal, or it may be the same type of materials as the bottom electrode, in which case another interlayer can be formed at the interface. A device constructed in this manner has the property of lower degradation due to fatigue, breakdown, and aging.
    URI
    http://hdl.handle.net/10919/72306
    Collections
    • Scholarly Works, Electrical and Computer Engineering [676]
    • Scholarly Works, Materials Science and Engineering (MSE) [393]
    • Virginia Tech Patents [687]

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