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Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films
A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CClF.sub.2 or CHClFCF.sub.3.