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dc.date.accessioned2016-08-24T17:53:51Z
dc.date.available2016-08-24T17:53:51Z
dc.date.issued1997-04-29
dc.identifier.urihttp://hdl.handle.net/10919/72337
dc.description.abstractA ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by a MOD process, or a liquid source delivery process, all of which are described.
dc.format.mimetypeapplication/pdf
dc.languageen_US
dc.publisherUnited States Patent and Trademark Office
dc.titleRare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices
dc.typePatent
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/87/255/056/0.pdf
dc.date.accessed2016-08-19
dc.type.dcmitypeText
dc.contributor.assigneeVirginia Polytechnic Institute and State University
dc.contributor.inventorDesu, Seshu B.
dc.contributor.inventorPeng, Chia-Tien Shian
dc.contributor.inventorSi, Jie
dc.date.filed1995-07-12
dc.identifier.applicationnumber8501283
dc.subject.uspc257/E27.104
dc.subject.uspcother257/E29.164
dc.subject.uspcother365/145
dc.subject.uspcother427/124
dc.subject.uspcother427/419.1
dc.subject.cpcH01L27/11502
dc.subject.cpcH01L29/516
dc.type.patenttypeutility
dc.identifier.patentnumber5625587


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