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dc.date.accessioned2016-08-24T17:53:55Z
dc.date.available2016-08-24T17:53:55Z
dc.date.issued1998-02-10
dc.identifier.urihttp://hdl.handle.net/10919/72353
dc.description.abstractA dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru (C.sub.5 H.sub.5).sub.2.
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.publisherUnited States Patent and Trademark Office
dc.titleMetalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials
dc.typePatent
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/34/172/057/0.pdf
dc.date.accessed2016-08-19
dc.type.dcmitypeText
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.
dc.contributor.assigneeSharp Kabushiki Kaisha
dc.contributor.inventorDesu, Seshu B.
dc.contributor.inventorPeng, Chia-Tien Shian
dc.contributor.inventorSi, Jie
dc.date.filed1997-01-16
dc.identifier.applicationnumber8784320
dc.subject.uspc257/295
dc.subject.uspcother257/296
dc.subject.uspcother257/535
dc.subject.uspcother257/E21.009
dc.subject.uspcother257/E21.011
dc.subject.uspcother257/E21.272
dc.subject.cpcC23C16/40
dc.subject.cpcC23C16/409
dc.subject.cpcH01L28/55
dc.subject.cpcH01L21/31691
dc.subject.cpcH01L28/60
dc.type.patenttypeutility
dc.identifier.patentnumber5717234


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