Show simple item record

dc.date.accessioned2016-08-24T17:54:02Zen
dc.date.available2016-08-24T17:54:02Zen
dc.date.issued1999-02-23en
dc.identifier.urihttp://hdl.handle.net/10919/72380en
dc.description.abstractA method of patterning layered structure oxide thin films involving placing the layered structure thin film (with or without a mask) laid on a substrate into a chamber which is partially filled with CHC1FCF.sub.3 gas and producing a glow discharge to cause the etching of the thin film ferroelectric material. The method provides high etch rates, good etch anisotropy and good etch uniformity. For example, for SBT and SBN thin films, the etch process provides etch rates in the range of 2.5 to 17.5 nm/min depending on the etch conditions and minimal etch residues at the end of the etch process is removed easily by low temperature (250.degree. C.) baking. Also, the method provides good etch selectivity in the films and minimal surface damage.en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.titleDry etching of layer structure oxidesen
dc.typePatenten
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/77/739/058/0.pdfen
dc.date.accessed2016-08-19en
dc.type.dcmitypeTexten
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorPan, Weien
dc.date.filed1995-02-22en
dc.identifier.applicationnumber8393233en
dc.subject.uspc216/13en
dc.subject.uspcother216/67en
dc.subject.uspcother257/E21.009en
dc.subject.uspcother257/E21.021en
dc.subject.uspcother257/E21.253en
dc.subject.uspcother438/722en
dc.subject.uspcother505/410en
dc.subject.cpcH01L21/31122en
dc.subject.cpcH01L28/55en
dc.subject.cpcH01L28/75en
dc.subject.cpcH01L41/332en
dc.type.patenttypeutilityen
dc.identifier.patentnumber5873977en


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record