Near-room temperature thermal chemical vapor deposition of oxide films

Publication Date
2001-11-13Filing Date
1999-04-30Inventor
Desu, Seshu B.
Senkevich, John J.
Metadata
Show full item recordAbstract
This invention discloses methods for the deposition of SiO.sub.2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.
Assignee
Virginia Tech Intellectual Properties, Inc.
Patent Number
6316055
Application Number
9302938
Primary/U.S. Class
427/255.28
Other/U.S. Class
427/255.6
438/763
438/780
438/785
438/790
CPC Class
C23C16/403
C23C16/402
C23C16/405
C23C16/407
C23C16/452
Y10T428/31667
Patent Type
utility
Collections
- Virginia Tech Patents [687]