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    Near-room temperature thermal chemical vapor deposition of oxide films

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    6316055.pdf (732.9Kb)
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    Publication Date
    2001-11-13
    Filing Date
    1999-04-30
    Inventor
    Desu, Seshu B.
    Senkevich, John J.
    Metadata
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    Abstract
    This invention discloses methods for the deposition of SiO.sub.2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.
    Assignee
    Virginia Tech Intellectual Properties, Inc.
    Patent Number
    6316055
    Application Number
    9302938
    Source URL
    http://pimg-fpiw.uspto.gov/fdd/55/160/063/0.pdf
    Primary/U.S. Class
    427/255.28
    Other/U.S. Class
    427/255.6
    438/763
    438/780
    438/785
    438/790
    CPC Class
    C23C16/403
    C23C16/402
    C23C16/405
    C23C16/407
    C23C16/452
    Y10T428/31667
    Patent Type
    utility
    URI
    http://hdl.handle.net/10919/72439
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