Show simple item record

dc.date.accessioned2016-08-24T17:54:15Zen
dc.date.available2016-08-24T17:54:15Zen
dc.date.issued2001-11-13en
dc.identifier.urihttp://hdl.handle.net/10919/72439en
dc.description.abstractThis invention discloses methods for the deposition of SiO.sub.2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.titleNear-room temperature thermal chemical vapor deposition of oxide filmsen
dc.typePatenten
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/55/160/063/0.pdfen
dc.date.accessed2016-08-19en
dc.type.dcmitypeTexten
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorSenkevich, John J.en
dc.date.filed1999-04-30en
dc.identifier.applicationnumber9302938en
dc.subject.uspc427/255.28en
dc.subject.uspcother427/255.6en
dc.subject.uspcother438/763en
dc.subject.uspcother438/780en
dc.subject.uspcother438/785en
dc.subject.uspcother438/790en
dc.subject.cpcC23C16/403en
dc.subject.cpcC23C16/402en
dc.subject.cpcC23C16/405en
dc.subject.cpcC23C16/407en
dc.subject.cpcC23C16/452en
dc.subject.cpcY10T428/31667en
dc.type.patenttypeutilityen
dc.identifier.patentnumber6316055en


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record