2T-1C ferroelectric random access memory and operation method thereof

Publication Date
2002-06-11Filing Date
2000-09-11Inventor
Yoo, In-kyeong
Metadata
Show full item recordAbstract
A 2T-1C FRAM, each cell of which includes two transistors and one ferroelectric capacitor so that the “charging” and “discharging” of the ferroelectric capacitor used in conjunction with the p-n junction of the two transistors performs write/read operations without switching thereby avoiding degradation problems such as fatigue and imprint in the 2T-1C FRAM.
Assignee
SAMSUNG ELECTRONICS CO., LTD.
Virginia Tech Intellectual Properties, Inc.
Patent Number
6404667
Application Number
9658942
Primary/U.S. Class
365/145
Other/U.S. Class
365/189.4
365/189.15
365/189.16
365/200
365/210.1
365/210.15
CPC Class
G11C11/22
Patent Type
utility
Collections
- Virginia Tech Patents [545]