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    2T-1C ferroelectric random access memory and operation method thereof

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    6404667.pdf (546.7Kb)
    Downloads: 31
    Publication Date
    2002-06-11
    Filing Date
    2000-09-11
    Inventor
    Yoo, In-kyeong
    Metadata
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    Abstract
    A 2T-1C FRAM, each cell of which includes two transistors and one ferroelectric capacitor so that the “charging” and “discharging” of the ferroelectric capacitor used in conjunction with the p-n junction of the two transistors performs write/read operations without switching thereby avoiding degradation problems such as fatigue and imprint in the 2T-1C FRAM.
    Assignee
    SAMSUNG ELECTRONICS CO., LTD.
    Virginia Tech Intellectual Properties, Inc.
    Patent Number
    6404667
    Application Number
    9658942
    Source URL
    http://pimg-fpiw.uspto.gov/fdd/67/046/064/0.pdf
    Primary/U.S. Class
    365/145
    Other/U.S. Class
    365/189.4
    365/189.15
    365/189.16
    365/200
    365/210.1
    365/210.15
    CPC Class
    G11C11/22
    Patent Type
    utility
    URI
    http://hdl.handle.net/10919/72449
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    • Virginia Tech Patents [545]

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