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dc.date.accessioned2016-08-24T17:55:41Z
dc.date.available2016-08-24T17:55:41Z
dc.date.issued1995-01-17
dc.identifier.urihttp://hdl.handle.net/10919/72827
dc.description.abstractA method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CHCl.sub.2 CF.sub.3 or CHClFCF.sub.3.
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.publisherUnited States Patent and Trademark Office
dc.titleReactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas
dc.typePatent
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/20/823/053/0.pdf
dc.date.accessed2016-08-19
dc.type.dcmitypeText
dc.contributor.assigneeCedraeus Incorporated
dc.contributor.assigneeVirginia Polytechnic Institute and State University
dc.contributor.assigneeSharp Kabushiki Kaisha
dc.contributor.inventorDesu, Seshu B.
dc.contributor.inventorPan, Wei
dc.date.filed1993-07-22
dc.identifier.applicationnumber8096171
dc.subject.uspc216/76
dc.subject.uspcother257/E21.011
dc.subject.uspcother257/E21.252
dc.subject.uspcother257/E21.253
dc.subject.uspcother257/E21.311
dc.subject.uspcother438/712
dc.subject.uspcother438/720
dc.subject.cpcH01L28/60
dc.subject.cpcH01L21/31116
dc.subject.cpcH01L21/31122
dc.subject.cpcH01L21/32136
dc.subject.cpcH01L31/1884
dc.subject.cpcY02E10/50
dc.type.patenttypeutility
dc.identifier.patentnumber5382320


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