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dc.date.accessioned2016-08-24T17:55:43Zen
dc.date.available2016-08-24T17:55:43Zen
dc.date.issued1995-07-11en
dc.identifier.urihttp://hdl.handle.net/10919/72837en
dc.description.abstractA method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire disks, Pt/Ti/SiO.sub.2 /Si wafers, and RuO.sub.x /SiO.sub.2 /Si wafers by both hot-wall and cold-wall CVD reactors at deposition temperature as low as 550.degree. C. and a reduced pressure 6 torr. The source materials include metalorganic precursors and oxidizing agent. The metalorganic precursors can be metal alkoxides, metal acetylacetonates, or metal .beta.-diketonates. Preferably, the precursors are lead tetramethylheptadione for Pb component, zirconium tetramethylheptadione for Zr component, and titanium ethoxide for Ti component and the oxidizing agent is oxygen. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. The Pb(Zr.sub.0.82 Ti.sub.0.18)O.sub.3 film produced by the present invention shows a spontaneous polarization of 23.3 .mu.C/cm.sup.2, a remanent polarization of 12.3 .mu.C/cm.sup.2, and coercive field of 64.5 kV/cm.en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.titleMetalorganic chemical vapor deposition of ferroelectric thin filmsen
dc.typePatenten
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/58/319/054/0.pdfen
dc.date.accessed2016-08-19en
dc.type.dcmitypeTexten
dc.contributor.assigneeCeraboma, Inc.en
dc.contributor.assigneeVirginia Polytechnic Institute and State Universityen
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorPeng, Chia-Tien Shianen
dc.date.filed1992-12-31en
dc.identifier.applicationnumber7999738en
dc.subject.uspc427/255.32en
dc.subject.uspcother427/126.3en
dc.subject.uspcother427/255.394en
dc.subject.cpcC23C16/409en
dc.type.patenttypeutilityen
dc.identifier.patentnumber5431958en


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