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dc.contributor.authorFeng, Tianmingen_US
dc.description.abstractDecreasing reserves of natural resources drives the oil and gas industry to drill deeper and deeper to reach unexploited wells. Coupled with the demand for substantial real-time data transmission, the need for high speed electronics able to operating in harsher ambient environment is quickly on the rise. This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm GaN on SiC RF transistor which has extremely high junction temperature capability. Measurements show that the proposed VCO can operate reliably under ambient temperature from 25 °C up to 230 °C and is tunable from 328 MHz to 353 Mhz. The measured output power is 18 dBm with ±1 dB variations over entire covered temperature and frequency range. Measured phase noise at 230 °C is from -121 dBc/Hz to -109 dBc/Hz at 100 KHz offset.en_US
dc.publisherVirginia Techen_US
dc.rightsThis item is protected by copyright and/or related rights. Some uses of this item may be deemed fair and permitted by law even without permission from the rights holder(s), or the rights holder(s) may have licensed the work for use under certain conditions. For other uses you need to obtain permission from the rights holder(s).en_US
dc.subjecthigh temperatureen_US
dc.subjectextreme environmenten_US
dc.subjectGaN on SiCen_US
dc.subjectdownhole communications systemen_US
dc.titleDesign of a High Temperature GaN-Based VCO for Downhole Communicationsen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.degreeMaster of Scienceen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineElectrical Engineeringen_US
dc.contributor.committeechairHa, Dong Samen_US
dc.contributor.committeechairKoh, Kwang-Jinen_US
dc.contributor.committeememberSable, Daniel M.en_US

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