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dc.contributor.authorAsryan, Levon V.en
dc.contributor.authorSokolova, Z. N.en
dc.contributor.authorPikhtin, N. A.en
dc.contributor.authorTarasov, I. S.en
dc.date.accessioned2017-03-08T07:18:19Zen
dc.date.available2017-03-08T07:18:19Zen
dc.date.issued2016en
dc.identifier.urihttp://hdl.handle.net/10919/75309en
dc.description.abstractA model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the two-dimensional (2D) active region (QW) and bulk waveguide region (optical confinement layer – OCL). The charge of each sign in the OCL is shown to be significantly larger than that in the QW. As a result of this, (i) the global electroneutrality condition reduces to the condition of electroneutrality in the OCL and (ii) the local electroneutrality in the QW can be strongly violated, i.e., the 2D electron and hole densities in the QW can significantly differ from each other.en
dc.format.extent? - ? (7) page(s)en
dc.languageEnglishen
dc.publisherIop Publishingen
dc.relation.urihttp://www.mse.vt.edu/people/faculty/asryan.htmlen
dc.rightsCreative Commons Attribution 3.0 Unporteden
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleTheory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structureen
dc.typeArticle - Refereeden
dc.description.versionPublished (Publication status)en
dc.rights.holderThe Author(s)en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.title.serialJournal of Physics: Conference Seriesen
dc.identifier.doihttps://doi.org/10.1088/1742-6596/740/1/012002en
dc.identifier.volume740en
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen


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Creative Commons Attribution 3.0 Unported
License: Creative Commons Attribution 3.0 Unported