Show simple item record

dc.contributor.authorAsryan, Levon V.en
dc.contributor.authorSokolova, Z. N.en
dc.contributor.authorPikhtin, N. A.en
dc.contributor.authorTarasov, I. S.en
dc.description.abstractA model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the two-dimensional (2D) active region (QW) and bulk waveguide region (optical confinement layer – OCL). The charge of each sign in the OCL is shown to be significantly larger than that in the QW. As a result of this, (i) the global electroneutrality condition reduces to the condition of electroneutrality in the OCL and (ii) the local electroneutrality in the QW can be strongly violated, i.e., the 2D electron and hole densities in the QW can significantly differ from each other.en
dc.format.extent? - ? (7) page(s)en
dc.publisherIop Publishingen
dc.rightsCreative Commons Attribution 3.0 Unporteden
dc.titleTheory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structureen
dc.typeArticle - Refereeden
dc.description.versionPublished (Publication status)en
dc.rights.holderThe Author(s)en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.title.serialJournal of Physics: Conference Seriesen
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen

Files in this item


This item appears in the following Collection(s)

Show simple item record

Creative Commons Attribution 3.0 Unported
License: Creative Commons Attribution 3.0 Unported