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dc.contributor.authorAsryan, LVen_US
dc.contributor.authorSokolova, ZNen_US
dc.contributor.authorPikhtin, NAen_US
dc.contributor.authorTarasov, ISen_US
dc.date.accessioned2017-03-08T07:18:19Z
dc.date.available2017-03-08T07:18:19Z
dc.date.issued2016en_US
dc.identifier.urihttp://hdl.handle.net/10919/75309
dc.description.abstractA model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the two-dimensional (2D) active region (QW) and bulk waveguide region (optical confinement layer – OCL). The charge of each sign in the OCL is shown to be significantly larger than that in the QW. As a result of this, (i) the global electroneutrality condition reduces to the condition of electroneutrality in the OCL and (ii) the local electroneutrality in the QW can be strongly violated, i.e., the 2D electron and hole densities in the QW can significantly differ from each other.en_US
dc.format.extent? - ? (7) page(s)en_US
dc.languageEnglishen_US
dc.publisherIop Publishingen_US
dc.relation.urihttp://www.mse.vt.edu/people/faculty/asryan.htmlen_US
dc.titleTheory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structureen_US
dc.typeArticle - Refereed
dc.description.versionPublished (Publication status)en_US
dc.title.serialJournal of Physics: Conference Seriesen_US
dc.identifier.doihttps://doi.org/10.1088/1742-6596/740/1/012002
dc.identifier.volume740en_US
pubs.organisational-group/Virginia Tech
pubs.organisational-group/Virginia Tech/All T&R Faculty
pubs.organisational-group/Virginia Tech/Engineering
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Faculty
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineering


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