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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributorIoffe Physico-Technical Instituteen
dc.contributor.authorAsryan, Levon V.en
dc.contributor.authorSokolova, Zinaida N.en
dc.date.accessioned2017-06-12T19:36:38Zen
dc.date.available2017-06-12T19:36:38Zen
dc.date.issued2014-01-14en
dc.identifier.citationAsryan, Levon V. & Sokolova, Zinaida N. (2014). Optical power of semiconductor lasers with a low-dimensional active region. Journal of Applied Physics, 115(2). doi: 10.1063/1.4861408en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/78025en
dc.description.abstractA comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipUnited States. Army Research Office - Grant No. W911NF-13-1-0445en
dc.format.extent? - ? (7) page(s)en
dc.languageEnglishen
dc.publisherAmer Inst Physicsen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000329922700007&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectPhysics, Applieden
dc.subjectPhysicsen
dc.subjectQUANTUM-WELL LASERSen
dc.subjectCARRIER CAPTUREen
dc.subjectEMISSIONen
dc.subjectELECTRONSen
dc.subjectESCAPEen
dc.subjectQuantum wellsen
dc.subjectElectronsen
dc.subjectElectron captureen
dc.subjectCurrent densityen
dc.subjectCharge injectionen
dc.titleOptical power of semiconductor lasers with a low-dimensional active regionen
dc.typeArticle - Refereeden
dc.description.versionPublished (Publication status)en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/115/2/10.1063/1.4861408en
dc.title.serialJOURNAL OF APPLIED PHYSICSen
dc.identifier.doihttps://doi.org/10.1063/1.4861408en
dc.identifier.volume115en
dc.identifier.issue2en
dc.identifier.orcidAsryan, LV [0000-0002-2502-1559]en
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen


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