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dc.contributor.authorAllen, Noah P.en_US
dc.date.accessioned2017-06-13T19:43:46Z
dc.date.available2017-06-13T19:43:46Z
dc.date.issued2014-12-09en_US
dc.identifier.otheretd-12232014-112417en_US
dc.identifier.urihttp://hdl.handle.net/10919/78078
dc.description.abstractA film which is optically transparent and electrically conductive is difficult to come by but can be realized in ways such as doping an oxidized film or by oxidizing a metallic film resulting in what is known as a transparent conducting oxide (TCO). TCO's have many important uses in electronics, especially as the top contact in to solar cells where efficient transmission of light and low electrical resistivity allow for higher efficiency solar cells and as the gate contact in AlGaN/GaN HFET's allowing for optical characterization of the subsurface transistor properties. Because these devices rely heavily on the characteristics of its material interfaces, a detailed analysis should be done to investigate the electrical effects of implementing a TCO. In this work, the electrical characterization of ruthenium dioxide (RuO₂) Schottky contacts to gallium nitride (GaN) formed by evaporating ruthenium with a subsequent open-air annealing is presented. The results gathered from the current-voltage-temperature and the capacitance-voltage relationships were compared to ruthenium (Ru) on GaN and platinum (Pt) on GaN. Additionally, the measurement and analysis procedure was qualified on a similar structure of nickel on GaAs due to its well-behave nature and presence in the literature. The results indicate that an inhomogeneous Gaussian distribution of barrier heights exists at the RuO₂/GaN interface with an increase of 83meV in the mean barrier height when compared to Ru/GaN.
dc.language.isoen_USen_US
dc.publisherVirginia Techen_US
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Virginia Tech or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectI-Ven_US
dc.subjectRuthenium Dioxideen_US
dc.subjectElectrical Characterizationen_US
dc.subjectGaNen_US
dc.subjectSchottkyen_US
dc.titleElectrical Characterization of Ruthenium Dioxide Schottky Contacts on GaNen_US
dc.typeThesisen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.degreeM.S.en_US
thesis.degree.nameM.S.en_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
dc.contributor.committeechairGuido, Louis J.en_US
dc.contributor.committeememberAning, Alexen_US
dc.contributor.committeememberLu, G.Q.en_US
dc.type.dcmitypeTexten_US
dc.identifier.sourceurlhttp://theses.lib.vt.edu/theses/available/etd-12232014-112417/en_US
dc.date.sdate2014-12-23en_US


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