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dc.contributor.authorCunningham, Michael Lawrenceen
dc.date.accessioned2017-07-21T06:00:22Zen
dc.date.available2017-07-21T06:00:22Zen
dc.date.issued2016-01-27en
dc.identifier.othervt_gsexam:7028en
dc.identifier.urihttp://hdl.handle.net/10919/78388en
dc.description.abstractAs the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230°C with a minimum noise figure (NF) of 2.0 dB, gain of 16.1 dB, and P1dB of 19.1 dBm from 230.5MHz — 285.5MHz. The maximum variation with temperature from 25°C to 230°C is 1.53dB for NF and 0.65dB for gain.en
dc.format.mediumETDen
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecthigh temperatureen
dc.subjectextreme environmenten
dc.subjectlow noise amplifieren
dc.subjectGaN on SiCen
dc.subjectdownhole communications systemen
dc.titleA High Temperature Wideband Low Noise Amplifieren
dc.typeThesisen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.description.degreeMaster of Scienceen
thesis.degree.nameMaster of Scienceen
thesis.degree.levelmastersen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.disciplineElectrical Engineeringen
dc.contributor.committeechairHa, Dong Samen
dc.contributor.committeechairKoh, Kwang-Jinen
dc.contributor.committeememberLu, Guo Quanen


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