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dc.contributor.authorYang, Dong
dc.contributor.authorYang, Ruixia
dc.contributor.authorWang, Kai
dc.contributor.authorWu, Congcong
dc.contributor.authorZhu, Xuejie
dc.contributor.authorFeng, Jiangshan
dc.contributor.authorRen, Xiaodong
dc.contributor.authorFang, Guojia
dc.contributor.authorPriya, Shashank
dc.contributor.authorLiu, Shengzhong (Frank)
dc.date.accessioned2018-09-19T14:49:08Z
dc.date.available2018-09-19T14:49:08Z
dc.date.issued2018-08-13
dc.identifier.urihttp://hdl.handle.net/10919/85048
dc.description.abstractEven though the mesoporous-type perovskite solar cell (PSC) is known for high efficiency, its planar-type counterpart exhibits lower efficiency and hysteretic response. Herein, we report success in suppressing hysteresis and record efficiency for planar-type devices using EDTA-complexed tin oxide (SnO2) electron-transport layer. The Fermi level of EDTA-complexed SnO2 is better matched with the conduction band of perovskite, leading to high open-circuit voltage. Its electron mobility is about three times larger than that of the SnO2. The record power conversion efficiency of planar-type PSCs with EDTA-complexed SnO2 increases to 21.60% (certified at 21.52% by Newport) with negligible hysteresis. Meanwhile, the low-temperature processed EDTA-complexed SnO2 enables 18.28% efficiency for a flexible device. Moreover, the unsealed PSCs with EDTA-complexed SnO2 degrade only by 8% exposed in an ambient atmosphere after 2880 h, and only by 14% after 120 h under irradiation at 100 mW cm−2.en_US
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.publisherSpringer Natureen_US
dc.rightsAttribution 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.titleHigh efficiency planar-type perovskite solar cells with negligible hysteresis using EDTA-complexed SnO2en_US
dc.typeArticle - Refereeden_US
dc.title.serialNature Communicationsen_US
dc.identifier.doihttps://doi.org/10.1038/s41467-018-05760-x
dc.identifier.volume9en_US
dc.type.dcmitypeText


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Attribution 4.0 International
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