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dc.contributor.authorLi, Linglong
dc.contributor.authorLu, Lu
dc.contributor.authorWang, Zhiguang
dc.contributor.authorLi, Yanxi
dc.contributor.authorYao, Yonggang
dc.contributor.authorZhang, Dawei
dc.contributor.authorYang, Guang
dc.contributor.authorYao, Jianjun
dc.contributor.authorViehland, Dwight D.
dc.contributor.authorYang, Yaodong
dc.date.accessioned2019-01-28T17:56:17Z
dc.date.available2019-01-28T17:56:17Z
dc.date.issued2015-03-18
dc.identifier.issn2045-2322
dc.identifier.other9229
dc.identifier.urihttp://hdl.handle.net/10919/87055
dc.description.abstractDynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.en_US
dc.description.sponsorshipMinistry of Science and Technology of China through a 973-Project [2012CB619401]; National Natural Science Foundation of China [11204233]; fundamental research funds for the central universities; scientific research foundation for the returned overseas Chinese scholars, Ministry of Education
dc.format.extent7
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.publisherSpringer Nature
dc.rightsCreative Commons Attribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectmemory devices
dc.subjectnanodevices
dc.subjectresistance
dc.titleAnatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin filmsen_US
dc.typeArticle - Refereed
dc.description.notesThe authors gratefully acknowledge Miss. Yajing Shen for the helpful discussion. This work was supported by the Ministry of Science and Technology of China through a 973-Project under Grant No. 2012CB619401, National Natural Science Foundation of China (Grant No. 11204233), the fundamental research funds for the central universities and the scientific research foundation for the returned overseas Chinese scholars, Ministry of Education.
dc.title.serialScientific Reports
dc.identifier.doihttps://doi.org/10.1038/srep09229
dc.identifier.volume5
dc.type.dcmitypeText
dc.identifier.pmid25784511


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