Synthesis and Characterization of Si, Ge, and SixGe1-x Nanowires by Fiber Drawing

Abstract

This research provides a method of using a mixed powder in tube approach for producing and characterizing large quantities of highly oriented, high aspect ratio semiconductor nanowires in an inherently safe and contained manner. This work modifies the previously used mixed powder method to produce significantly smaller features below 100nm in diameter. For the first time SiGe alloys are produced in optical fiber from a mixture of the two powders across the entire compositional range. A discussion of the properties of silicon and germanium and their alloys is given with emphasis on the differences between properties at the bulk scale and at the nanoscale. The limitations of silicon and germanium for photonic applications, due to their indirect band gap nature, is removed when these materials are reduced to the nanoscale. A brief discussion of ways that these properties can be modified is given with size, composition, and strain all being viable factors of control. The optical and electrical properties of these nanowire arrays is evaluated as a function of the size, number of wires, and composition. A clear dependence between size and quantity of wires was observed with respect to composition. The nanowires were found to have complex interactions with light showing high absorption as well as unique transmission characteristics. Arrays of these fibers were able to create a measurable photocurrent and provide potential uses for detection of light and other photonic applications. An understanding of the etching necessary to both expose these nanowires for analysis as well as completely remove them from the glass matrix was developed. Etch rates in these areas was observed to be higher than reported etch values. Etching with dilute solutions was found to allow removal of the wires cleanly and allow recovery of them for other applications.