Virginia TechDi Ventra, M.2014-04-162014-04-162001-10Di Ventra, M., "Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?," Appl. Phys. Lett. 79, 2402 (2001); http://dx.doi.org/10.1063/1.13990090003-6951http://hdl.handle.net/10919/47367A simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band interface-state density with silicon dioxide as Si, being higher for the valence band. The conduction-band interface-state density should be higher for 4H-SiC than for 6H-SiC for both the C- or Si-terminated interfaces. On the contrary, the valence-band interface-state density can be either higher or lower for 4H-SiC compared to 6H-SiC according to which atom, C or Si, terminates the interface. The trends suggested by the above model are in agreement with recent mobility measurements in SiC-based field-effect transistors. (C) 2001 American Institute of Physics.en-USIn Copyrightoxide-semiconductor capacitorsthin-film oxidationsilicon-carbideband-edgesprecipitationpolytypeArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/79/15/10.1063/1.1399009https://doi.org/10.1063/1.1399009