Ma, YunweiPorter, MatthewQin, YuanSpencer, JosephDu, ZhonghaoXiao, MingWang, YifanKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Udrea, FlorinTadjer, MarkoWang, HanZhang, Yuhao2024-01-182024-01-182024-01Y. Ma, M. Porter, Y. Qin, J. Spencer, Z. Du, M. Xiao, Y. Wang, I. Kravchenko, D. P. Briggs, D. K. Hensley, F. Udrea, M. Tadjer, H. Wang, and Y. Zhang, “1 kV Self-Aligned Vertical GaN Superjunction Diode,” IEEE Electron Device Lett., vol. 45, no. 1, pp. 12–15, Jan. 2024, doi: 10.1109/LED.2023.3332855.0741-3106https://hdl.handle.net/10919/117395This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance ( RON) of 0.4 mΩ⋅ cm2, and a SJ drift-region resistance ( Rdr) of 0.13 mΩ⋅ cm2. The device also exhibits good thermal stability with B V retained over 1 kV and RON dropped to 0.3 mΩ⋅ cm2 at 125oC . The trade-off between B V and Rdr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.Pages 12-15application/pdfenCreative Commons Attribution 4.0 InternationalArticle - Refereedhttps://doi.org/10.1109/LED.2023.33328554511558-0563