Virginia Tech. Department of Materials Science and EngineeringZhang, YueWang, ZhiguangWang, YaojinLuo, ChengtaoLi, JiefangViehland, Dwight D.2015-05-212015-05-212014-02-24Zhang, Yue, Wang, Zhiguang, Wang, Yaojin, Luo, Chengtao, Li, Jiefang, Viehland, Dwight (2014). Electric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg1/3Nb2/3)-PbTiO3 magnetoelectric heterostructures. Journal of Applied Physics, 115(8). doi: 10.1063/1.48664950021-8979http://hdl.handle.net/10919/52414Magnetostrictive Fe-Ga thin layers were deposited on < 110 >-oriented Pb(Mg1/3Nb2/3)-30% PbTiO3 (PMN-30% PT) substrates by pulsed laser deposition. The as-prepared heterostructures showed columnar arrays aligned in the out-of-plane direction. Transmission electron microscopy revealed nanocrystalline regions within the columnar arrays of the Fe-Ga film. The heterostructure exhibited a strong converse magnetoelectric coupling effect of up to 4.55 x 10(-7) s m(-1), as well as an electric field tunability of the in-plane magnetic anisotropy. Furthermore, the remanent magnetization states of the Fe-Ga films can be reversibly and irreversibly changed by external electric fields, suggesting a promising and robust application in magnetic random access memories and spintronics. (C) 2014 AIP Publishing LLC.6 pagesapplication/pdfen-USIn CopyrightPiezoelectric fieldsHeterojunctionsMagnetic filmsFerromagnetismMagnetic anisotropyElectric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg1/3Nb2/3)-PbTiO3 magnetoelectric heterostructuresArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/115/8/10.1063/1.4866495Journal of Applied Physicshttps://doi.org/10.1063/1.4866495