Virginia TechAsryan, Levon V.2014-04-162014-04-162006-02-01Asryan, LV, "Maximum power of quantum dot laser versus internal loss," Appl. Phys. Lett. 88, 073107 (2006); http://dx.doi.org/10.1063/1.21741030003-6951http://hdl.handle.net/10919/47392Internal loss, which increases with the carrier density outside the active region, causes a rollover of the light-current curve and strongly limits the output power of a diode laser with a single layer of quantum dots. The maximum power is calculated as a steeply decreasing function of internal loss cross section. The use of multiple layers of quantum dots is shown to significantly improve the laser output characteristics.application/pdfenIn CopyrightConfined active-regionSemiconductor-lasersWell lasersOptical lossThresholdGainArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/88/7/10.1063/1.2174103https://doi.org/10.1063/1.2174103