Virginia Tech. Department of Materials Science and EngineeringIoffe Physico-Technical InstituteAsryan, Levon V.Sokolova, Zinaida N.2017-06-122017-06-122014-01-14Asryan, Levon V. & Sokolova, Zinaida N. (2014). Optical power of semiconductor lasers with a low-dimensional active region. Journal of Applied Physics, 115(2). doi: 10.1063/1.48614080021-8979http://hdl.handle.net/10919/78025A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser. (C) 2014 AIP Publishing LLC.? - ? (7) page(s)In CopyrightPhysics, AppliedPhysicsQUANTUM-WELL LASERSCARRIER CAPTUREEMISSIONELECTRONSESCAPEQuantum wellsElectronsElectron captureCurrent densityCharge injectionArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/115/2/10.1063/1.4861408https://doi.org/10.1063/1.48614081152Asryan, LV [0000-0002-2502-1559]