Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films

2016-08-242016-08-241996-03-05http://hdl.handle.net/10919/72309A method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CClF.sub.2 or CHClFCF.sub.3.application/pdfenReactive ion etching of lead zirconate titanate and ruthenium oxide thin filmsPatenthttp://pimg-fpiw.uspto.gov/fdd/37/964/054/0.pdf8075059216/6216/76257/E21.011257/E21.252257/E21.253257/E21.311438/3438/722H01L28/60H01L21/31116H01L21/31122H01L21/32136H01L31/1884Y02E10/505496437