2016-08-242016-08-241998-10-06http://hdl.handle.net/10919/72368A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a semiconductor device produced in accordance with the process. The lead titanate seeding layer allows the subsequent lead zirconate titanate to be annealed at a significantly lower seeding temperature, to lessen interdiffusion among the films, electrodes and substrate and to lessen thermal stresses.application/pdfen-USPatenthttp://pimg-fpiw.uspto.gov/fdd/70/171/058/0.pdf8298344117/2117/84257/E21.010257/E21.272427/126.3427/419.2C23C18/1208C23C18/1225C23C18/1254H01L28/56H01L21/02197H01L21/02282H01L21/02304H01L21/02356H01L21/023625817170