Ahn, JongtaeKo, KyulKyhm, Ji-hoonRa, Hyun-SooBae, HeesunHong, SungjaeKim, Dae-YeonJang, JisuKim, Tae WookChoi, SungwonKang, Ji-HoonKwon, NamheePark, SoohyungJu, Byeong-KwonPoon, Ting-ChungPark, Min-ChulIm, SeongilHwang, Do Kyung2022-02-152022-02-152021-11-231936-0851http://hdl.handle.net/10919/108360Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.Pages 17917-17925application/pdfenIn Copyright2D ReSe22D WSe2digital incoherent holographyheterostructurelinear polarization detectionNanoscience & NanotechnologyArticle - Refereed2022-02-15https://doi.org/10.1021/acsnano.1c062341511Poon, Ting Chung [0000-0002-7070-6856]346770451936-086X