Virginia TechZhu, Y.Jain, N.Mohata, Dheeraj K.Datta, SumanLubyshev, DmitriFastenau, Joel M.Liu, A. K.Hudait, Mantu K.2014-01-212014-01-212012-09-01Zhu, Y.; Jain, N.; Mohata, D. K.; et al., "Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure," Appl. Phys. Lett. 101, 112106 (2012); http://dx.doi.org/10.1063/1.47521150003-6951http://hdl.handle.net/10919/24963The structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to "virtual substrate." Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 +/- 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752115]application/pdfenIn CopyrightHeterojunctionsPhysicsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/101/11/10.1063/1.4752115https://doi.org/10.1063/1.4752115