Virginia TechLiu, T.Verma, MeghnaKang, Y. H.Orlowski, Marius K.2014-04-162014-04-162012-08-01Liu, Tong; Verma, Mohini; Kang, Yuhong; et al., "Volatile resistive switching in Cu/TaOx/delta-Cu/Pt devices," Appl. Phys. Lett. 101, 073510 (2012); http://dx.doi.org/10.1063/1.47462760003-6951http://hdl.handle.net/10919/47426A volatile switching of conductive filament (CF) in a Cu/TaOx/delta-Cu/Pt device has been observed. The device differs from a conventional Cu/TaOx/Pt device by the insertion of a thin Cu-layer (delta-Cu) between the electrolyte and the inert electrode. The Cu CF is formed the same way as in the conventional nonvolatile devices. However, when applied voltage becomes zero, CF ruptures spontaneously. The dynamic balance between Cu+ field-supported hopping transport and the Cu self-diffusion explains the effect of CF volatility. The device can operate reliably in volatile and nonvolatile modes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746276]application/pdfenIn CopyrightCopperElectrodesMagnetization reversalsElectrical resistivityInterface diffusionArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/101/7/10.1063/1.4746276https://doi.org/10.1063/1.4746276