Virginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL)Hudait, Mantu K.Zhu, Yan2015-05-042015-05-042013-03-21Hudait, Mantu K., Zhu, Yan (2013). Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Journal of Applied Physics, 113(11). doi: 10.1063/1.47952840021-8979http://hdl.handle.net/10919/51971Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111) A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO2) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, DEv values of HfO2 relative to (100) Ge, (110) Ge, and (111) Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, Delta E-V(100)Ge > Delta E-V(111)Ge > Delta E-V(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, DEc relation, Delta E-c(110)Ge > Delta E-c(111)Ge > Delta E-c(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO2 on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p-and n- channel metal-oxide field-effect transistor for low-power application. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795284]7 pagesapplication/pdfenIn CopyrightGermaniumElemental semiconductorsEpitaxyBand gapIII-V semiconductorsArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/113/11/10.1063/1.4795284https://doi.org/10.1063/1.4795284