Virginia TechHan, D. S.Asryan, Levon V.2014-04-162014-04-162008-06-01Han, Dae-Seob; Asryan, Levon V., "Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing," Appl. Phys. Lett. 92, 251113 (2008); http://dx.doi.org/10.1063/1.29524880003-6951http://hdl.handle.net/10919/47422We study the optical output power of a semiconductor laser, which exploits tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells. Even if there is out-tunneling leakage of carriers from QDs, the intensity of parasitic recombination outside QDs remains restricted with increasing injection current. As a result, the light-current characteristic becomes increasingly linear, and the slope efficiency grows closer to unity at high injection currents-a fascinating feature favoring the use of tunneling-injection of both electrons and holes into QDs for high-power lasing. (C) 2008 American Institute of Physics.application/pdfen-USIn CopyrightModulation bandwidthActive-regionLaserWellTemperatureArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/92/25/10.1063/1.2952488https://doi.org/10.1063/1.2952488