2016-08-242016-08-241997-01-14http://hdl.handle.net/10919/72329The chemical vapor deposition of hydridospherosiloxane to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. The chemical vapor deposition process synthesized compounds with the general formula, EQU (HSiO.sub.3/2).sub.n, with n being an even number ranging from 8 to a very large number. More particularly, it relates to the vapor deposition of oligomeric hydrogensilsesquioxanes, henceforth referred to as hydridospherosiloxanes. The hydridospherosiloxanes are used directly in a chemical vapor deposition reactor to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. Hydridospherosiloxanes and soluble hydrogensilsesquioxane resin are produced having the formula EQU (HSiO.sub.3/2).sub.n, where n is an even integer greater than 8.application/pdfen-USPatenthttp://pimg-fpiw.uspto.gov/fdd/27/937/055/0.pdf8148391427/248.1427/255.37528/31C01B33/00C08G77/125593727