Virginia TechDesu, Seshu B.Pan, Wei2014-04-162014-04-161996-01-01Desu, SB; Pan, W, "Reactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin films," Appl. Phys. Lett. 68, 566 (1996); http://dx.doi.org/10.1063/1.1164020003-6951http://hdl.handle.net/10919/47406Ferroelectric SrBi2TaxNb2-xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHCIFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process. (C) 1996 American Institute of Physics.application/pdfen-USIn CopyrightEtchingFerroelectric thin filmsSurface cleaningEnvironmental impactsNiobiumArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/68/4/10.1063/1.116402https://doi.org/10.1063/1.116402