Rangan, Ramasamy2021-11-052021-11-051987http://hdl.handle.net/10919/106528The problems associated with IGT/COMFET devices in PWM converters, such as turn off current tailing and latching are largely avoided in a resonant converter. Dynamic saturation loss is identified as the predominant power loss in IGT/COMFET devices for very high frequency resonant operation. Device design change is suggested for very high frequency resonant operation applications.viii, 76 leavesapplication/pdfenIn CopyrightLD5655.V855 1987.R362Electric current convertersSemiconductorsThesis