Qin, YuanXiao, MingZhang, RuizheXie, QingyunPalacios, TomásWang, BoyanMa, YunweiKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Srijanto, Bernadeta R.Zhang, Yuhao2024-04-082024-04-082023-07https://hdl.handle.net/10919/118510This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 m ·cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.application/pdfenCreative Commons Attribution 4.0 InternationalPower electronicswide bandgapgallium nitridevertical devicebreakdown voltagereliabilityArticle - Refereedhttps://doi.org/10.1109/LED.2023.3282025447