Lim, Youngmin2022-06-012022-06-012022-05-31vt_gsexam:34526http://hdl.handle.net/10919/110379Transport of spin angular momentum (spin currents) in magnetic thin films is important for non-volatile spin-based memory devices and other emerging information technology applications. It is especially important to understand how a spin current propagates across interfaces and how a spin current interacts with magnetic moments. The great interest in devices based on ferromagnetic metals generated intensive theoretical and experimental studies on the basic physics of spin currents for the last few decades. Of particular interest recently is the so-called "pure" electronic spin current, which is carried by electrons and yet unaccompanied by net charge flow, in part because of the prospect of transporting spin with minimal Joule heating. However, in contrast to ferromagnetic metals, spin transport in antiferromagnetic metals, which are promising materials for next-generation magnetic information technology, is not well understood yet. This dissertation addresses the mechanisms of transport by pure spin current in thin-film multilayers incorporating metals with antiferromagnetic order. We focus on two specific materials: (1) CoGd alloys with ferrimagnetic sublattices, which resemble antiferromagnets near the compensation composition, and (2) elemental antiferromagnetic Cr, which can be grown as epitaxial films and hence serve as a model system material. For both the CoGd and Cr studies, spin-valve-like structures of NiFe/Cu/CoGd and NiFe/Cu/Cr/CoFe are prepared to conduct ferromagnetic resonance spin pumping experiments. Precessing magnetization in the NiFe "spin source" pumps a transverse spin current to the adjacent layers. We measure the loss of the spin angular momentum in the "spin sink" layer by measuring the broadening of the resonance linewidth, i.e., the non-local damping enhancement, of the spin source. The antiparallel magnetic moments of Co and Gd sublattices partially cancel out the dephasing of a transverse spin current, thereby resulting in a long spin dephasing length of ≈ 5-6 nm near the magnetic compensation point. We find evidence that the spin current interacts somewhat more strongly with the itinerant transition-metal Co magnetism than the localized rare-earth-metal Gd magnetism in the CoGd alloy. We also examine spin transport via structurally clean antiferromagnetic Cr, epitaxially grown with BCC crystal order. We observe strong spin reflection at the Cu/Cr interface, which is surprising considering that thin layers of Cu and Cr individually are transparent to spin currents carried by electrons. Further, our results indicate other combinations of electrically conductive elemental metals (e.g., Cu/V) can form effective spin-reflecting interfaces. Overall, this thesis advances the basic understanding of spin transport in metallic thin films with and without magnetic order, which can aid the development of next generations of efficient spintronic devices. This work was supported in part by the National Science Foundation, Grant No. DMR-2003914.ETDenIn CopyrightSpintronicsSpin CurrentAntiferromagnetFerrimagnetFerromagnetic ResonanceDissertation