Virginia Tech. Department of Materials Science and EngineeringUniversity of Illinois at Urbana-Champaign. Department of Electrical and Computer Engineering. Micro & Nanotechnology LabRaytheon RF ComponentsShi, Frank F.Chang, Kuo-lihHsieh, Kuang-ChienGuido, Louis J.Hoke, Bill2015-05-212015-05-212004-02-01Shi, F. F., Chang, K., Hsieh, K. C., Guido, L., Hoke, B. (2004). Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors. Journal of Applied Physics, 95(3), 909-912. doi: 10.1063/1.16339800021-8979http://hdl.handle.net/10919/52503Material integrations of GaN/GaN and Al0.25Ga0.75N/GaN semiconductors through wafer bonding technology were reported in this work. The wafer surface and interface microstructures were characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy. The interface adhesion (bonding strength) was estimated based upon the interface fracture energy gamma(o) measured by double-cantilever beam technique. The interface adhesion properties of several different wafer-bonded III-V semiconductors were also compared. By comparing the atomic chemical bond energy E-o with the measured interface fracture energy gamma(o), the bondability of a few major III-V semiconductors was analyzed. (C) 2004 American Institute of Physics.5 pagesapplication/pdfen-USIn CopyrightIII-V semiconductorsInterface structureAdhesionChemical bondsEnergy dispersive X-ray spectroscopyArticle - Refereedhttp://scitation.aip.org/content/aip/journal/jap/95/3/10.1063/1.1633980https://doi.org/10.1063/1.1633980