Zubov, Fedor I.Zhukov, A. E.Shernyakov, Y. M.Maximov, Mikhail V.Semenova, E. S.Asryan, Levon V.2017-03-082017-03-082015-01-011742-6588http://hdl.handle.net/10919/75311It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.5 pagesapplication/pdfenCreative Commons Attribution 3.0 UnportedTechnologyEngineering, Electrical & ElectronicNanoscience & NanotechnologyPhysics, MultidisciplinaryEngineeringScience & Technology - Other TopicsPhysicsDiode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristicsArticle - RefereedThe Author(s)2nd International School And Conference Saint-Petersburg Open On Optoelectronics, Photonics, Engineering And Nanostructures (Spbopen2015)https://doi.org/10.1088/1742-6596/643/1/012042643