Chin, Shaoan2015-07-092015-07-091985http://hdl.handle.net/10919/54275Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.xvi, 228 leavesapplication/pdfen-USIn CopyrightLD5655.V856 1985.C546Power semiconductors -- Design and constructionThyristors -- Design and constructionBipolar transistors -- Design and constructionDissertation