Chen, Yuhui2011-08-062011-08-062004-08-23etd-06272000-14570054http://hdl.handle.net/10919/10099With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers.ETDIn CopyrightResonant Power ConversionPower MOSFETGate DriveThesishttp://scholar.lib.vt.edu/theses/available/etd-06272000-14570054