2016-08-242016-08-241996-06-18http://hdl.handle.net/10919/72317A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays.application/pdfen-USPatenthttp://pimg-fpiw.uspto.gov/fdd/67/275/055/0.pdf8454029257/E21.009257/E21.011257/E21.021257/E21.253257/E21.272427/573427/58427/79427/96.8427/126.2427/163.2427/255.31427/294427/314427/376.2427/380427/419.2427/574427/579427/583427/586427/595438/2438/3438/606438/608438/674C23C16/40H01L21/31122H01L21/31691H01L28/55H01L28/60H01L28/755527567