Li, LinglongLu, LuWang, ZhiguangLi, YanxiYao, YonggangZhang, DaweiYang, GuangYao, JianjunViehland, Dwight D.Yang, Yaodong2019-01-282019-01-282015-03-182045-23229229http://hdl.handle.net/10919/87055Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.7application/pdfen-USCreative Commons Attribution 4.0 Internationalmemory devicesnanodevicesresistanceArticle - Refereedhttps://doi.org/10.1038/srep09229525784511