Li, Yanlong2020-03-042020-03-042020http://hdl.handle.net/10919/97191Recently, the resistance switching random access memory (ReRAM) in several MIM systems has been studied extensively for applications to the next generation non-volatile memory (NVM) devices and memristors since the scaling of conventional memories based on floating gate MOSFETs is getting increasingly difficult. ReRAM is being considered one of the most promising candidates for next generation non-volatile memory due to its relatively high switching speed, superior scalability, low power consumption, good retention and simple fabrication method. Cu/TaOX/Pt resistive switching device is a very good candidate due to its well performance and well characterization. However, since platinum (Pt) acting as the inert electrode is not economical efficient for industrial production, a compatible replacement of Pt is highly desirable. The device property of Co based resistive switching devices has been explored in this work. Compared with Pt devices, electric characterization of the fabricated Cu/TaOX/Co devices exhibits very similar FORM, SET and RESET voltages for Cu conductive filaments. However, for the oxygen vacancy (VO) filament the Co device has a significant smaller FORM, SET and RESET voltages of VO filament, which can be partly attributed to the work function difference between Pt and Co of 1.35 V and partly to the impaired integrity properties of Co vs Pt inert electrode. The limit of SET-RESET operations is mainly due to the geometrical shape of the Cu conductive filament is more cylindered rather than Cone-like shape as well as the high Joules heat dissipation. What’s more, ReRAM is also the most promising candidate for a flexible memory, as a variety of materials can be used both inorganics, organics and even hybrid nanocomposites. Besides inorganic ReRAM device, we also fabricated an organic ReRAM device with the structure Cu doped PANI-CSA/O-AA/Al. We have manufactured ReRAM based on Cu-doped PANI-CSA polymer electrode, O-AA as the polymer solid electrolyte and Al as the bottom electrode for the first time. This polymer device shows a significantly lower forming voltage than inorganic ReRAM devices such as Cu/TaOX/Pt. Our results also demonstrate that our organic ReRAM is a promising candidate for inexpensive candidate for inexpensive and environmentally friendly memory devices. We have demonstrated that the FORM operation of the polymer devices depends on the concentration of Cu+ ions as well as the thickness of the polymer electrode.ETDen-USIn CopyrightResistive switching Random Access Memory (ReRAM)CobaltOrganicPANI-CSABottom electrodereliabilityThesis