Virginia TechLi, T. K.Zhu, Y. F.Desu, Seshu B.Peng, C. H.Nagata, M.2014-04-162014-04-161996-01-01Li, TK; Zhu, YF; Desu, SB; et al., "Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films," Appl. Phys. Lett. 68, 616 (1996); http://dx.doi.org/10.1063/1.1164860003-6951http://hdl.handle.net/10919/47393Ferroelectric layered-oxides SrBi2Ta2O9 thin films were prepared on Pt coated Si wafers and single-crystal sapphire by metalorganic chemical vapor deposition (MOCVD). The films were specular and crack-free and showed complete crystallization at temperatures between 650 and 700 degrees C. Good ferroelectric properties were obtained for a 200 nm thick film with Pt electrodes: 2P(r) and E(c) were about 8.3 mu C/cm(2) and 60 kV/cm, respectively. The leakage currents were as low as 8 X 10(-9) A/cm(2) at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4 X 10(10) switching cycles. These high quality MOCVD films make high-intensity (>1 Mbit) nonvolatile memory devices possible. (C) 1996 American Institute of Physics.application/pdfen-USIn CopyrightFerroelectric thin filmsMetal organic chemical vapor depositionMetallic thin filmsFerroelectric materialsThin film depositionArticle - Refereedhttp://scitation.aip.org/content/aip/journal/apl/68/5/10.1063/1.116486https://doi.org/10.1063/1.116486